Gauss Stack Frequently Asked Questions
What is “Trap Ratio”? How does this relate to etch factor and angle?
The “trap ratio” that we ask for in synthesis mode merely refers to the ratio between the width at the top of the trace conductor and the width at the bottom of the trace conductor. This is a much simpler and more direct number than the etch factor and angle. The conversion between our “trap ratio” and the etch factor and angle are as follows:
Do you have a vendor library? How does it work?
Yes, Gauss Stack ships with a vendor library, with all construction and dielectric property data provided to Avishtech directly by the material vendors. From these data, Avishtech has also, using our proprietary algorithms, extracted the relevant mechanical data that serve as the inputs for our Thermomechanical simulations, allowing you to conduct both electromagnetic and thermomechanical simulations, with just a few clicks. You simply click on the vendor library, add your chosen constructions to the prepreg and core layers of your stackup and you’re ready to go!
Can I run hybrid constructions in Gauss Stack?
Yes, Gauss Stack allows you to create hybrid stackups with ease. All you have to do is specify the layers to which you would like to add a particular construction and you are free to mix different dielectric materials, or even offerings from different dielectric material vendors, as you please.